Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices
HL 67.9: Poster
Wednesday, March 13, 2013, 16:00–20:00, Poster A
Fabrication and characterization of thin β−Ga2O3 samples — •Srujana Dusari1, Christine Bülow1, Saskia F. Fischer1, Zbigniew Galazka2, and Martin Albrecht2 — 1Novel Materials, Humboldt Universität zu Berlin, D-12489 Berlin — 2Leibniz Institute for Crystal Growth, D-12489 Berlin
The understanding of transport phenomena in transparent semiconducting oxides is the current subject of great excitement. Among the transparent semi conducting oxides β−Ga2O3 is very much interesting because of its transparency from deep ultraviolet region to infrared region. It has widest energy gap of 4.9 eV [1]. Here we report preparation and characterization of the thin β−Ga2O3 samples. β−Ga2O3 single crystals are grown by Czochralski technique [2]. Thin films are prepared via exfoliation technique. The samples are characterized using confocal microscopy, atomic force microscopy and scanning electron microscopy. Transport measurements will be discussed.
[1] M. Mohamed et.al. Appl. Phys. Lett. 97, 211903 (2010).
[2] Z. Galazka et. al. Cryst. Res. Technol. 45, No. 12, 1229 -1236 (2010).