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HL: Fachverband Halbleiterphysik

HL 83: Transport I

HL 83.5: Talk

Thursday, March 14, 2013, 16:00–16:15, H16

Resonant cavity enhanced telecommunication wavelength light detection by resonant tunneling — •Andreas Pfenning, Fabian Hartmann, Fabian Langer, Dirk Bisping, Sven Höfling, Martin Kamp, Alfred Forchel, and Lukas Worschech — Technische Physik, Physikalisches Insitut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany

We have fabricated GaAs based resonant tunneling diodes (RTD) with a nearby and lattice matched quaternary GaInNAs absorption layer for light detection at the telecommunication wavelength λ = 1.3 µm. The RTD photodetector was embedded in an optical cavity consisting of alternating GaAs/AlAs distributed Bragg reflectors (DBR) with a resonance wavelength at λ = 1.29 µm. RTD mesas with ring shaped contacts and an aperture for optical excitation of charge carriers were fabricated with diameters from 12 µm down to 1 µm. At room temperature resonant tunneling was found with a peak-to-valley ratio of 1.3. Photocurrent measurements of the RTD photodetector showed sensitivities of 31 kA/W for resonant optical excitation and a quantum efficiency enhancement of 10 compared to off resonance excitation. The photodetector shows a resolution down to single photons.