Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 83: Transport I
HL 83.6: Talk
Thursday, March 14, 2013, 16:15–16:30, H16
Effects of defects near source or drain contacts of carbon nanotube transistors — •Neng-Ping Wang1 and Xiao-Jun Xu2 — 1Physics Department, Science Faculty, Ningbo University, Fenghua Road 818, Ningbo 315211, P.R. China — 2Information Faculty, Ningbo City College of Vocational Technology, Xuefu Road 9, Ningbo 315100, P.R. China
In field-effect transistors, charge trapping in the gate oxide is known to cause random telegraph signals (RTSs) in the drain current. We calculate the amplitude of the RTS due to a single charged defect in a long-channel p-type carbon nanotube field-effect transistor, using the nonequilibrium Greens function method in a tight-binding approximation. We find that in the turn-on regime, the amplitude of the RTS due to a positive charge increases with the distance of the charge from the source (or drain) contact, and in the middle of the channel the RTS amplitude reaches about 100%. The amplitude of the RTS caused by a positive charge close to the source (or drain) contact increases with the applied gate voltage and drain voltage. In the on-state, a positive charge located at the nanotube-oxide interface and close to the source (or drain) contact may cause large RTSs about 50%. Similar amplitudes of RTSs have been observed in recent experiments [F. Liu, etal, Appl. Phys. Lett., 86 (2005) 163102].