Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 87: Goup IV elements and their compounds II
HL 87.7: Vortrag
Donnerstag, 14. März 2013, 17:15–17:30, H15
Side-wall damage analysis of low-k interlayer dielectric from energy-filtered transmission electron microscopy — •Pradeep K. Singh1, Sven Zimmermann2, Steffen Schulze1, Stefan Schulz2,3, and Michael Hietschold1 — 1Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz, Germany — 2FraunhoferInstitute for Electronic Nano Systems (Fraunhofer ENAS), Dept. BEOL, D-09107 Chemnitz, Germany — 3Chemnitz University of Technology, Center for Microtechnologies, D-09107 Chemnitz, Germany
The continues shrinkage in device dimensions leads towards the inevitable replacement of the conventional SiO2 material as an inter-layer dielectric with lower dielectric constant (low-k) material. Several low-k dielectric materials were developed for this purpose. Among these, the organosilicate glasses are of preferred choice due to their excellent properties as an inter-layer dielectric. The organosilicate glasses consist of the methyl groups doped inside the SiO2 networks. One of the major challenges to incorporate the low-k dielectric materials in device production is the side-wall damage of these materials. The side-wall damage regions were characterized by the energy-filtered transmission electron microscopy. The etch and ash plasma used in the standard processes, damaged the side-walls in the 10th of nano-meter region. The side-walls were found to be depleted from carbon and hence behave more like SiO2 material.Due to the higher dielectric constant of SiO2 as compared to the low-k dielectric materials, the effective dielectric constant of the low-k material increases by the plasma treatment.