DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 89: Transport II

HL 89.4: Talk

Thursday, March 14, 2013, 17:30–17:45, H16

Electron spin dynamics in Gd-implanted GaN — •Jörg Rudolph1, Jan Heye Buß1, Stepan Shvarkov2, Andreas D. Wieck2, and Daniel Hägele11AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany

Dilute magnetic semiconductors (DMS) are a prerequisite for the development and realization of a spin-based electronics. GaN-based DMS have attracted strong interest in the last years, with a special focus on Gd-doped GaN after reports of ferromagnetism with Curie temperatures far above room-temperature [1]. Experimental evidence for high-temperature ferromagnetism in Gd:GaN was, however, always based on integral measurements of the magnetization by SQUIDs, while complementary methods like x-ray magnetic dichroism or magnetic resonance techniques could not corroborate the claimed ferromagnetism [2]. We measure the electron spin dynamics in GaN implanted with different Gd densities as well as coimplanted with Si by time-resolved magneto-optical Kerr-rotation spectroscopy. We find strongly increased electron spinlifetimes for an intermediate Gd concentration. This strong increase is, however, shown to be a consequence of the high defect density created during the ion implantation, and not a consequence of a magnetic effect of the Gd ions.
[1] S. Dhar et al., Phys. Rev. Lett. 94, 037205 (2005)
[2] A. Ney et al., J. Magn. Magn. Mat. 322, 1162 (2010)

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2013 > Regensburg