Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: Structure and transport in organic photovoltaics; Photovoltaics; Impurities/Amorphous semiconductors; New materials
HL 92.16: Poster
Donnerstag, 14. März 2013, 16:00–20:00, Poster A
Optical and electrical characterization of InP-based InGaAsP/InGaAs low bandgap multijunction solar cells — •Anja Dobrich1, Klaus Schwarzburg1, Agnieszka Paszuk2, and Thomas Hannappel1,2,3 — 1Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin — 2Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, Ilmenau — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, Erfurt
Since III-V semiconductor concentrator solar cells grown by MOVPE become actually more attractive for terrestrial applications, it is a great issue to increase the efficiency while costs are reduced. III-V triple junction solar cells have demonstrated the highest conversion efficiencies (>41%) of any photovoltaic technology to date. Higher efficiencies can be achieved with a four-junction configuration, which has optimized band gaps. This can be realized with a mechanically stacked GaAs-based GaInP/GaAs top-tandem and an InP based InGaAsP/InGaAs bottom-tandem cell. Based on the latter two absorber materials, a low bandgap tandem solar cell with optimized bandgaps was developed. In the need for a suitable method to analyze our tandem cells, we developed an apparatus that allows for a fast and convenient evaluation of many cell performance parameters for illumination intensities equivalent up to 50 suns. The experimental setup makes it possible to measure all relevant data with the sample mounted on a probe station and to address each subcell of the tandem individually. Since the lifetime of minority carriers is one of the most important properties we analyzed the lifetime with time- and spatially-resolved photoluminescence.