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MI: Fachverband Mikrosonden
MI 4: Analytische Elektronenmikroskopie
MI 4.2: Talk
Monday, March 11, 2013, 16:00–16:15, H5
Strain Analysis of SiGe-based Field Effect Transistors by Nano Beam Electron Diffraction — •Daniel Erben1, Knut Müller1, Christoph Mahr1, Marco Schowalter1, Andreas Rosenauer1, Josef Zweck2, and Pavel Potapov3 — 1Institut für Festkörperphysik, Otto-Hahn-Alle 1, 28359 Bremen (Germany) — 2Universität Regensburg — 3Globalfoundries, Dresden
Enhancing carrier mobility in silicon-based electronic devices such as Metal Oxide Field Effect Transistors (MOSFET) has become a large field in scientific research. To this end, one approach is the introduction of stressors near source and drain to strain silicon compressively below the gate contact. In this work, we present strain and composition measurements in a MOSFET sample. In particular, Strain Analysis by Nano Beam electron Diffraction (SANBED) at an FEI Titan facility is used to record series of CBED diffraction patterns, in which disc positions are detected accurately to measure strain according to Bragg’s law. Subsequently three different algorithms can be used to calculate strain maps or profiles: edge detection, radial gradient maximisation and cross correlation with masks. In the present study, we focused on strain measurements in profiles through the MOSFET region below the gate in growth- and lateral direction, whereas first results of 2-dimensional strain mapping will be shown. By evaluating several reflections, a strain precision of 2· 10−3 is achieved. As SANBED allows for simultaneous evaluation of strain in both [001] and [110] direction, a reliable conversion to Ge-composition is possible, too.