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Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 13: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (jointly with HL)

Montag, 11. März 2013, 15:00–19:20, H2

15:00 O 13.1 Topical Talk: Optical absorption and radiation damage in transparent conducting oxides — •Andre Schleife, Friedhelm Bechstedt, Alfredo Correa, and Yosuke Kanai
15:30 O 13.2 Anisotropic dielectric function and carrier density of rutile SnO2 — •Christian Lidig, Karsten Lange, Martin Feneberg, Maciej Neumann, Norbert Esser, Mark E. White, Min-Ying Tsai, Oliver Bierwagen, James S. Speck, and Rüdiger Goldhahn
15:45 O 13.3 Topical Talk: Growth from the melt of high-quality In2O3 and Ga2O3 single crystals — •Roberto Fornari, Zbigniew Galazka, Reinhard Uecker, and Klaus Irmscher
  16:15 Coffee break
16:30 O 13.4 Surface structure of metal oxides via Fast Atom Diffraction — •Marco Busch, Eric Meyer, Jan Seifert, Helmut Winter, Klaus Irmscher, Zbigniew Galazka, and Roberto Fornari
16:45 O 13.5 Topical Talk: Development of gallium oxide power devices — •Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, and Shigenobu Yamakoshi
17:15 O 13.6 Structural, optical and electrical properties of Si-doped β-β-Ga2O3 thin films — •Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, and Marius Grundmann
17:30 O 13.7 Schottky contacts on β-Ga2O3 thin films grown by pulsed laser deposition — •Daniel Splith, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
  17:45 Coffee break
18:00 O 13.8 Printed, high performance inorganic oxide transistors from halide precursors — •Suresh Kumar Garlapati, Nilesha Mishra, Ramona Hahn, Simone Dehm, Robert Kruk, Subho Dasgupta, and Horst Hahn
18:15 O 13.9 Topical Talk: Surface electron accumulation layers in oxide semiconductors — •Tim Veal
18:45 O 13.10 Surface and bulk derived in-gap states of In2O3 single crystals — •Dorothee Braun, Valentina Scherer, Christoph Janowitz, Zbigniew Galazka, and Recardo Manzke
19:00 O 13.11 Electron transport in molecular-beam-epitaxy-grown SnO2 and In2O3 films: Doping, defects, and the surface — •Oliver Bierwagen, Natalie Preissler, Takahiro Nagata, Mark E. White, Min-Ying Tsai, and James S. Speck
  19:15 Concluding remarks
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