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DPG

Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.45: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Bi2Se3 films on Si(111): Growth optimization and in-situ SPA-LEED measurements — •Michael Vyshnepolsky, Claudius Klein, Anja Hanisch-Blicharski, and Michael Horn-von Hoegen — Fakultät für Physik und Center for Nanointegration CENIDE, Universität Duisburg-Essen, Lotharstr. 1, D-47057 Duisburg, Germany

Employing high resolution spot profile analysis low energy electron diffraction (SPA-LEED), atomic force microscopy (AFM) and x-ray diffraction (XRD) we studied the growth of Bi2Se3 on Si(111). The films were prepared by thermal co- deposition of Se and Bi with a flux ratio of 10:1 at temperatures between 200 and 250 C. The strain relaxation during the growth of the first quintuple layers was measured in-situ during deposition by tracking the (01)-spot position with SPA-LEED. At a thickness of 6 nm the Bi2Se3 film exhibits a lateral lattice parameter of 4.02 Å. The decrease of the spot width of the (00)-spot reflects that the crystal quality improves by post-growth annealing up to temperatures of 350 C. This is also confirmed in the AFM measurements, where remaining Se wires disappear with higher annealing temperature. XRD measurements of Bi2Se3 films with thickness of 70-80 nm verifies the high film quality and also confirms the vertical lattice parameter of 28.63 Å.

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