Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.78: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B1
Synthesis of epitaxial graphene on C-face SiC: influence of growth conditions — •Timo Schumann1, Inna Shteinbuk1,2, Myriano H. Oliveira Jr.1, J. Marcelo J. Lopes1, and Henning Riechert1 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2City College of New York, New York, United States
Surface Si depletion of hexagonal SiC offers the possibility of producing high-quality graphene directly on an insulating substrate. However, while on the Si-face monolayer graphene can be prepared on a large area, on the C-face a precise control over the number of layers is hard to be achieved. Nevertheless, even films with many carbon layers behave like decoupled monolayer graphene sheets on C-face SiC, potentially offering higher electron mobilities than graphene layers on Si-face SiC. We investigated the influence of the growth conditions, i.e. temperature, growth time and environment (Argon, vacuum, enclosed space) on the growth of epitaxial graphene on C-face SiC. The quality of the resulting layers is investigated by means of atomic force microscopy, Raman spectroscopy and magnetotransport measurements. This work aims to offer a guideline for reproducible production of uniform and high-quality graphene sheets.