Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: Poster Session II (Organic films and electronics, photoorganics; Nanostructures; Plasmonics and nanooptics, Surface chemical reactions and heterogeneous catalysis, Surface dynamics )
O 36.53: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B2
Mesoporous Silicon Nanowire Characterisation by Nitrogen Gas Adsorption — •Stefan Weidemann1, Dirk Wallacher2, and Saskia F. Fischer1 — 1Novel Materials, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Department Sample Environments, Helmholtz-Zentrum Berlin, 14109 Berlin, Germany
Silicon nanowires produced by metal-assisted chemical etching have different surface morphologies in dependence of the doping concentration[1]. Solid, rough and porous nanowire surfaces can be prepared. While the formation mechanism of rough surfaces is still unclear we investigate the surface texture of mesoporous silicon nanowires by nitrogen gas adsorption.
We fabricated silicon nanowire ensembles of undoped Si (resistivity
ρ>1 kΩcm), medium boron doped Si (ρ=14-23 Ωcm) and highly boron doped Si (ρ<10 mΩcm) and determined surface properties like pore diameter, pore volume and sample surface area. We discuss for samples of different preparation parameters such as etching time and etchant concentration how the pore formation is affected and determine the mean poresize distribution on highly doped nanowires.
A. I. Hochbaum et al., Nano Lett., Vol. 9, No. 10, 2009