Regensburg 2013 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 31: Correlated Electrons: Low-Dimensional Systems -Materials 1
TT 31.10: Talk
Tuesday, March 12, 2013, 12:00–12:15, H41
Gating a two-dimensional electron gas using a multiferroic — •Christian Mix1, 2, Mathias Kläui1, and Gerhard Jakob1 — 1Institute of Physics, Universität Mainz, Germany — 2Graduate school of excellence MAINZ, Mainz, Germany
Recently, research on oxide interfaces has exposed a unexpected conducting state at the interface of lanthanum aluminate (LAO) and strontium titanate (STO), two bulk insulators [1]. Laser ablation enables to the deposition of a wide range of oxide multilayer systems with thickness control at atomic level. Many interesting applications can be introduced by the use of multilayered, epitaxial perovskite structures [2,3].
The sheet resistivity of the 2DEG at the STO/LAO interface possesses a strong dependence on an out-of-plane electrical field. Thus the use of a ferroelectric layer on top of the STO/LAO interface system can lead to a remanent control of the conductivity of the 2DEG. Here, results on the growth and characterization of the multiferroic BiFeO3 on the STO/LAO interface system containing a 2DEG are shown. On the other hand, piezo force microscopy (PFM) is utilized as a tool to observe the ferroelectric domain structure of the BFO thin film with the 2DEG as a back electrode.
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C. Chen, S. Thiel, J. Mannhart, J. Levy, Science 323 (2009) 1026