Regensburg 2013 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 33: Topological Insulators 3 (jointly with HL, MA, and O)
TT 33.3: Talk
Wednesday, March 13, 2013, 09:45–10:00, H16
Three-dimensional Models of Topological Insulator Films: Dirac Cone Engineering and Spin Texture Robustness — David Soriano1, •Frank Ortmann1, and Stephan Roche1,2 — 1Catalan Institute of Nanotechnology, Barcelona (Spain) — 2ICREA, Barcelona (Spain)
Topological insulators feature surface states which exhibit certain robustness to disorder and which can be gapped due to inter-surface tunneling. By designing three-dimensional models of topological insulator thin films, we demonstrate a tunability of surface states and the odd number of Dirac cones on opposite surfaces by modifications of the atomic-scale geometry at the boundaries. [1,2] This enables the creation of a single Dirac cone at the Γ point as well as possible suppression of quantum tunneling between Dirac states at opposite surfaces. We further analyze the robustness of the spin texture to bulk disorder which may help in quantifying bulk disorder in materials with ultraclean surfaces. [2]
[1] L. Fu, C.L. Kane, and E.J. Mele, Phys. Rev. Lett. 98, 106803 (2007)
[2] D. Soriano, F. Ortmann, and S. Roche, Phys. Rev. Lett. (in press)