Dresden 2014 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 18: Dielectric and ferroelectric thin films

DF 18.7: Vortrag

Mittwoch, 2. April 2014, 18:00–18:20, GER 37

Asymmetric oxygen vacancy distribution in CaTiO3 capacitors — •Andreas Krause1, Walter M. Weber1, Uwe Schroeder1, Johannes Heitmann1,2, and Thomas Mikolajick1,31NaMLab gGmbh, D-01187 Dresden — 2Institut fuer Angewandte Physik, TU Bergakademie Freiberg — 3Institut fuer Halbleiter- und Mikroelektronik IHM, TU Dresden

CaTiO3 is a promising material as a high-k dielectric in metal-insulator-metal capacitors, combining a high dielectric constant (k) and relatively low leakage currents. Using various electrodes, CaTiO3 shows intrinsic differences for both top and bottom charge carrier injection in addition to electrode dependent injection. Therefore, the band offset between valence band of the dielectric and the work function of the electrode material is not the only parameter responsible for leakage currents. As previously stated in literature for SrTiO3[1], electrodes induce differences in oxygen vacancy distribution in the dielectric. Here, CaTiO3 exhibits a conduction behavior comparable to SrTiO3 with different electrodes Pt, C, Ru and TiN. This indicates an universal behavior of high-k perovskites and may be crucial for future device integration.
Kim et al. Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM capacitor for the DRAM application. Memory Workshop, 2012 4th IEEE International

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