Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Application of Thin Films
DS 1.1: Vortrag
Montag, 31. März 2014, 09:30–09:45, CHE 91
Lattice dynamics of epitaxial EuSi2 thin films and nanostructures — •Anja Seiler1, 2, Olga Bauder1, 2, Shyjumon Ibrahimkutty1, 2, Przemyslaw Piekarz3, Daniel Merkel4, Rudolf Rüffer4, Tilo Baumbach1, 2, Michael Fiederle5, and Svetoslav Stankov1, 2 — 1Laboratory for Applications of Synchrotron Radiation, KIT, Germany — 2Institute for Photon Science and Synchrotron Radiation, KIT, Germany — 3Institute of Nuclear Physics, Polish Academy of Sciences, Poland — 4European Synchrotron Radiation Facility, France — 5Freiburg Materials Research Center, Germany
The continuous downscaling of the CMOS devices demands a constant search for new self-organizing nanostructures. The rare earth silicides became especially attractive due to their very low Schottky barrier of 0.3-0.4 eV on n-type silicon [1-3]. It is very well known that the finite material's sizes at the nanoscale significantly modify their thermoelastic properties. Therefore it is mandatory to get comprehensive understanding of the lattice dynamics in order to even tailor the properties at the nanoscale. Here we will present experimental data on in situ nuclear inelastic scattering [4] from 151Eu for the phonon density of states of EuSi2 thin films and nanoislands. The experimental results are compared with the ab intio calculations.
[1] G.L. Molnar et al., J. Appl. Phys. 90, 503 (2001). [2] M. Ieong et al., Mater. Today 9, 26 (2006). [3] N. Reckinger et al., Appl. Phys. Lett. 94, 191913 (2009). [4] S. Stankov et al., Chapter 1 in "Mössbauer Spectroscopy: Applications in Chemistry, Biology, Industry, and Nanotechnology" (2013)