Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Application of Thin Films
DS 1.4: Vortrag
Montag, 31. März 2014, 10:15–10:30, CHE 91
Rolled-up nanomembranes for field effect transistors and fluidic sensing applications — •Daniel Grimm1,2, Cesar Bufon1,2, Paola Atkinson1, Dominic Thurmer1, Franziska Schäffel1, Sandeep Gorantla1, Alicja Bachmatiuk1, and Oliver Schmidt1,2 — 1Institute for Integrative Nanosciences, IFW Dresden, Germany — 2Technische Universität Chemnitz, Material Systems for Nanoelectronics, Germany
In this work we demonstrate for the first time a three-dimensional freestanding metal oxide field-effect-transistor based on strained hybrid nanomembranes [1]. The fabrication process combines conventional device patterning with selective etching to form the three-dimensional rolled-up transistor (RUFET). Extremely small bending radii in the range of 5um can be achieved by taking advantage of the self-rolling technique. The hollow core of the as-produced RUFETs can be further explored foruidic sensing applications with a large sensitivity when feeding polar solvents through the tubes. By standard two-dimensional lithography, the Ohmic contacts, gate electrodes and Al2O3 dielectrics are defined on the surface of single-crystalline semiconducting multilayers. Upon selective etching of an underlying sacrificial layer, the complete planar transistor curls up so that the nanomembrane based channel bonds back onto the gate electrode. This rolled-up technique yields a substantial reduction of the device footprint and the as-produced RUFET can be driven in the depletion mode regime with gate-voltage swings around 160 mV/decade and on-off ratios being several orders of magnitudes. [1] D. Grimm et al., Nano Letters 13,213(2013)