Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 16: Focus Session: Sensoric Micro and Nano-systems II

DS 16.3: Talk

Tuesday, April 1, 2014, 14:45–15:00, CHE 89

Abnormal Thermal Transport in Two-dimensional Silicon — •Ming Hu — Institute of Mineral Engineering, Division of Materials Science and Engineering, Faculty of Georesources and Materials Engineering, RWTH Aachen University, 52064 Aachen, Germany — Aachen Institute for Advanced Study in Computational Engineering Science (AICES), RWTH Aachen University, 52062 Aachen, Germany

Silicene, the silicon equivalent of graphene, has recently attracted significant attention because it has graphene-like electronic structures including the presence of the Dirac cone at the Fermi level and because of its compatibility with mature Si-based electronics. In this presentation, first I will describe my recent atomistic simulation on thermal transport of atomically thin two-dimensional silicon (silicene). We found that silicene has extremely low thermal conductivity, which is about 20 times smaller than bulk Si and two orders of magnitude less than that of its carbon counterpart graphene. Second, I will present the effect of strain on the thermal conductivity of this novel 2-D material. We discovered that, contrary to its counterpart of graphene and despite the similarity of their honeycomb lattice structure, silicene exhibits an anomalous thermal response to tensile strain. Finally, I will demonstrate the effect of length and impurity on the thermal transport of silicene, which makes silicene very promising for thermoelectrics. Our findings provide a guide of how to modulate the thermal transport properties of two-dimensional Si with nanoengineering and may be of use in tuning their electronic and optical properties for electronic, thermoelectric, photovoltaic, and opto-electronic applications.