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DS: Fachverband Dünne Schichten

DS 17: Ion and Electron Beam Induced Processes

DS 17.3: Vortrag

Dienstag, 1. April 2014, 14:30–14:45, CHE 91

Systematic investigations of low energy ion beam sputtering of Ge — •Rene Feder, Horst Neumann, Carsten Bundesmann, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e.V, Leipzig, Germany

The ion beam sputter deposition (IBD) technique provides intrinsic features which influence the properties of the growing films. Ion properties and geometrical process conditions generate different kinetic energy and spatial distributions of both the sputtered and the scattered particles and consequently influence the properties of the growing films.

A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (incidence and emission angles) and of ion beam parameters (species, energy) to make a systematic analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. Several sets of samples were prepared and characterized with respect to selected film properties, such as thickness, optical properties, composition and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties. For a better understanding of these correlations, the energy distribution of secondary particles was measured using an ESMS. Among others, experiments revealed high-energetic maxima for backscattered primary ions, which shift with increasing emission angle to higher energies. Experimental data are compared with MC simulations.

Financial support by DFG (BU2625/1-1) is gratefully acknowledged.