Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Ion and Electron Beam Induced Processes

DS 17.4: Talk

Tuesday, April 1, 2014, 14:45–15:00, CHE 91

Enhanced Sputtering Effects of Ion Irradiated Silicon Nanowires — •Stefan Noack¹, Andreas Johannes¹, Henry Holland-Moritz¹, Markus Glaser², Alois Lugstein², and Carsten Ronning¹ — ¹Institiut für Festkörperphysik, Friedrich-Schiller-Universität Jena — ²Institut für Festkörperelektronik, Technische Universität Wien

While being easy to fabricate through both physical and chemical approaches, nanostructure customization often finds its limits due to thermal equilibrium. Ion implantation has become an important tool to circumvent this restriction, especially when doping semi-conductive materials. For the prediction of the behaviour of ion beam irradiated nanostructures, different approaches in theoretical calculation and computer simulation have been implemented, such as the Monte Carlo simulation program iradina [1]. The description of effects like sputtering, however, which differs greatly for nanostructures compared to bulk material, still has to be verified experimentally. With focus on this matter, etched silicon nanowires with a wide array of diameters were irradiated by argon ions of different energies, meeting conditions in order to preserve crystallinity and prevent bombardment induced bending. Subsequently, SEM investigations were made to quantify the sputter yield in comparison with the results from iradina simulations, all to be discussed in this presentation.

[1] C. Borschel, C. Ronning; Nucl. Instrum. Meth. Phys. Res. B 269, 2133 (2011)