DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 17: Ion and Electron Beam Induced Processes

DS 17.4: Vortrag

Dienstag, 1. April 2014, 14:45–15:00, CHE 91

Enhanced Sputtering Effects of Ion Irradiated Silicon Nanowires — •Stefan Noack1, Andreas Johannes1, Henry Holland-Moritz1, Markus Glaser2, Alois Lugstein2, and Carsten Ronning11Institiut für Festkörperphysik, Friedrich-Schiller-Universität Jena — 2Institut für Festkörperelektronik, Technische Universität Wien

While being easy to fabricate through both physical and chemical approaches, nanostructure customization often finds its limits due to thermal equilibrium. Ion implantation has become an important tool to circumvent this restriction, especially when doping semi-conductive materials. For the prediction of the behaviour of ion beam irradiated nanostructures, different approaches in theoretical calculation and computer simulation have been implemented, such as the Monte Carlo simulation program iradina [1]. The description of effects like sputtering, however, which differs greatly for nanostructures compared to bulk material, still has to be verified experimentally. With focus on this matter, etched silicon nanowires with a wide array of diameters were irradiated by argon ions of different energies, meeting conditions in order to preserve crystallinity and prevent bombardment induced bending. Subsequently, SEM investigations were made to quantify the sputter yield in comparison with the results from iradina simulations, all to be discussed in this presentation.

[1] C. Borschel, C. Ronning; Nucl. Instrum. Meth. Phys. Res. B 269, 2133 (2011)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden