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DS: Fachverband Dünne Schichten

DS 17: Ion and Electron Beam Induced Processes

DS 17.5: Talk

Tuesday, April 1, 2014, 15:00–15:15, CHE 91

Investigation of dopant profiles, losses and heating using an energy filter for ion implantation — •Florian Krippendorf¹, Constantin Csato¹, Michael Rüb¹, Carsten Ronning², and Johannes von Borany³ — ¹Ernst-Abbe-Fachhochschule Jena, Carl-Zeiss-Promenade 2, 07745 Jena — ²Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — ³Helmholtz-Zentrum Dresden-Rossendorf e.V., Bautzner Landstraße 400, 01328 Dresden

Creating doped areas with depth distributions of several µm is difficult for some materials. A combination of a monoenergetic ion implantation (narrow depth distribution) and a subsequent diffusion step is not a suitable process, if diffusion coefficients are small. To overcome this problem a so called energy filter [1] has been developed. It consists of a micro patterned silicon membrane which modifies the ion beam in such a way, that the irradiated substrate is doped in a larger depth distribution. In the talk we show our results from the work on the energy filter. We demonstrate doping of a 7x7mm² Si substrate with 7MeV B ions in a depth distribution of 4 µm with only one implantation. SIMS and SRP measurements show the shape of the implanted profile and loss of ions due to scattering. To support these data the energy spectra of the ion beam after passing different microstructures and the resulting implantation profiles are simulated. The properties of the filter regarding heating, channelling, degradation etc. are discussed.

[1] F. Krippendorf et al., Proceedings MikroSystemTechnik Kongress 2013, 14.-16. Oktober 2013, Aachen: VDE Verlag, 2013, 8.12, 662-665