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Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 20: Focus Session: Emerging oxide semiconductors I (jointly with HL, DF, O)

DS 20.8: Vortrag

Mittwoch, 2. April 2014, 12:00–12:15, POT 081

MOCVD grown homo and heteroepitaxial β-Ga2O3 layer studied by transmission electron microscopy — •Robert Schewski, Martin Albrecht, Günter Wagner, Michele Baldini, Zbigniew Galazka, and Reinhard Uecker — Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany

We report on the structural properties of β-Ga2O3 layers, grown by MOCVD for various growth conditions. In detail, the influence of different precursors, namely pure oxygen, water, and CO2 on the crystalline film quality has been investigated. Our studies were carried out for hetero- as well as homoepitaxially grown samples on (0001) sapphire and melt grown (100) β-Ga2O3 substrates, respectively. The conclusions are mainly based on transmission electron microscopy and x-ray data.

As main results, we found that pure oxygen in the growth ambient leads to the formation of nano-crystals in form of wires or agglomerates for both hetero- and homoepitaxial growth. However, by using water as oxygen precursor, smooth (rms: 6.5 nm) single crystalline layers can be achieved for homoepitaxial growth. Still, the structural quality of these thin films suffers from a substantial amount of stacking faults, which can be evidenced by TEM and x-ray data. However, annealing in oxidizing atmosphere at (900C) leads to a reduction these stacking faults and thus improves the crystalline quality of the film. Another interesting observation is the formation of a pseudomorphic, 3 monolayers thick Ga2O3 layer in the alpha phase, directly at the interface between the sapphire substrate and the film.

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