Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)
DS 24.2: Vortrag
Mittwoch, 2. April 2014, 10:00–10:15, CHE 89
BiFeO3 bilayer structures for implementing beyond von-Neumann computing — •Tiangui You1, Yao Shuai2, Wenbo Luo2, Nan Du1, Danilo Bürger1, Ilona Skorupa3, René Hübner3, Stephan Henker4, Christian Mayr4, René Schüffny4, Thomas Mikolajick5, Oliver G. Schmidt1,6, and Heidemarie Schmidt1 — 1TU Chemnitz, Chemnitz — 2UESTC, Chengdu, China — 3HZDR, Dresden — 4TU Dresden, Dresden — 5NaMLab gGmbH, Dresden — 6IFW Dresden, Dresden
The conventional von-Neumann architecture, which physically separates processing and memory operations, is limited in so much as the processor cannot execute a program faster than instructions and data can be fetched from and returned to memory[1]. Resistive switching devices[2] are considered as one of the most promising candidates for carrying out the processing and storage simultaneously and at the same device cell. In this work, we present a BiFeO3:Ti/BiFeO3 bilayer structure which shows stable and nonvolatile resistive switching behaviour under both positive and negative bias. With the same writing bias, the bilayer structure shows different resistance state for the different polarity of reading bias. The resistance states are distinguishable and stable enough for the practical applications. For the logic applications, the polarity of reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions simultaneously and into a same single bilayer structure cell in three logic cycles. [1] C. D. Wright, et al., Adv. Funct. Mater., 2013, 23, 2248 [2] A. Bogusz, T. You, et al., accepted in Proc. IEEE (2013)