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DS: Fachverband Dünne Schichten
DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)
DS 24.4: Vortrag
Mittwoch, 2. April 2014, 10:30–10:45, CHE 89
High On/Off ratio in ReRAM cells from TiN/TiOx/Al2O3/Pt by atomic layer deposition — •Hehe Zhang, Nabeel Aslam, Rainer Waser, and Susanne Hoffmann-Eifert — Forschungszentrum Juelich, PGI-7 und JARA-FIT, 52425 Juelich, Germany
The bilayer of TiOx/Al2O3 was integrated into micro-cross point TiN/bilayer/Pt devices and investigated for resistive switching memory application. Liquid injection Atomic Layer Deposition (ALD) was used for the deposition of Al2O3 and TiOx in this work. Amorphous Al2O3 films with thickness in the nano meter range were prepared using DMAI[(CH3)2AlOCH(CH3)2] and water as oxide source. Al2O3 thin films grown on Pt/Si substrates under optimized parameters have sharp interface, low roughness, low impurity level and high insulating properties. Integrated into the TiN/TiOx/Al2O3/Pt micro-cross point structures, the insulting behaviour of Al2O3 improved the resistive switching behaviour of the cells. The variation of TiOx thickness has a significant effect on the Roff/Ron ratio during switching, whereas the change of Al2O3 thickness mainly affects the forming and reset voltage. Bilayer-cells with about 3 to 4 nm Al2O3 and 5 to 10 nm TiOx exhibited a stable bipolar type resistive switching behaviour with resistance ratios of about 104 to 105.
This work was supported in part by the Deutsche Forschungsgemeinschaft (SFB917), and by the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korea.