Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)
DS 24.5: Talk
Wednesday, April 2, 2014, 10:45–11:00, CHE 89
Higher harmonics generation using Au/BiFeO3/Pt metal-insulator-metal (MIM) structure — •N. Du1, N. Manjunath1, T. You1, Y. Shuai2, W. Luo2, D. Bürger1,3, I. Skorupa3, R. Schüffny4, C. Mayr5, M. Di Ventra6, O. Schmidt1,7, and H. Schmidt1,3 — 1Faculty of Electrical Engineering and Information Technology, TU Chemnitz — 2State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC — 3Institute of Ion Beam Physics and Materials Research, HZDR — 4Department of Electrical Engineering and Information Technology, TU Dresden — 5Computational Systems Biology Group, ETH Zürich — 6Department of Physics, University of California — 7Institute for Integrative Nanosciences, IFW Dresden
Memristive systems can be used for the generation of higher harmonics [1]. We investigated the second and higher harmonics generation by means of a passive circuit with a sinusoidal input voltage source in series with a load resistor and a single memristor (Au/BiFeO3/Pt) that exhibits nonvolatile bipolar resistive switching. We found that a single memristor in high resistance state and in low resistance state can be used to generate two clearly distinguishable sets of second and higher harmonics. The power conversion efficiencies (PCEs) for higher harmonics generation can be derived from the normalized charge-flux curves of the single memristor [2]. The PCEs can be possibly used in neuromorphic computing. [1] G.Z. Cohen et al., Appl. Phys. Lett. 100, 133109 (2012) [2] N. Du et al., Rev. Sci. Instrum. 84, 023903 (2013)