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DS: Fachverband Dünne Schichten

DS 25: Focus Session: Resistive Switching by Redox and Phase Change Phenomena II (Valence and phase change in oxides)

DS 25.1: Invited Talk

Wednesday, April 2, 2014, 11:15–11:45, CHE 89

Nanoscale redox-processes in resistive switching oxide devices — •Regina Dittmann — Peter Gruenberg Institut (PGI-7), Forschungszentrum Juelich GmbH, 5425 Juelich

Although there exists a general consensus that bipolar resistive switching in transition metal oxides is in most cases connected with a redox-process, the details of the underlying physical mechanism are only poorly understood up to now. One of the obstacles for its further elucidation is that the net changes of structure, stoichiometry and valence state during electroforming and switching are very small and occur primarily at the electrode interface ore within nanoscale filaments. Besides electron microscopy and- spectroscopy, different Synchrotron radiation based spectroscopy and scattering techniques have been employed so far in order to detect local redox-processes and/or filament formation caused by the electrical treatment of resistive switching oxide devices. This talk will give an overview over electrically-induced structural and stoichiometric changes detected in different types of oxide thin film devices and will discuss their implications on device scaling and stability.