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DS: Fachverband Dünne Schichten
DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)
DS 32.5: Talk
Wednesday, April 2, 2014, 16:00–16:15, CHE 89
Resistive switching of flash lamp crystallized YMnO3 thin films prepared on Pt/Ti/SiO2/Si substrates by low-temperature pulsed laser deposition — •Agnieszka Bogusz1,2, Sławomir Prucnal1, Wolfgang Skorupa1, Daniel Blaschke1, Barbara Abendroth3, Hartmut Stöcker3, Ilona Skorupa1, Danilo Bürger2, Oliver G. Schmidt2,4, and Heidemarie Schmidt2 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — 2Material Systems for Nanoelectronics, Chemnitz University of Technology — 3Institute of Experimental Physics, TU Bergakademie Freiberg — 4Institute for Integrative Nanosciences, IFW Dresden
Use of multiferroic oxides as a switching medium presents an opportunity to add the additional or novel functionalities into the switching device. Typically, the growth temperatures of such oxides are above 600 ∘C and so far CMOS compatibility has not been achieved. YMnO3 exhibits unipolar resistive switching [1] however its high crystallization temperature (above 750∘C) imposes difficulties in preparation of thin films on metal-coated substrates. This work presents the results of electrical and structural characterization of YMnO3 thin films grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition at 400 ∘C and crystallized by flash lamp annealing (FLA). It is shown that the FLA process with optimized parameters allows the preparation of polycrystalline YMnO3 films without deformation of the Pt/Ti electrode and interdiffusion processes in the YMnO3/Pt/Ti/SiO2 stack.
[1] A. Bogusz et al., IEEE Xplore (2013), DOI:10.1109/ISCDG.2013.656319