Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)

DS 32.6: Talk

Wednesday, April 2, 2014, 16:15–16:30, CHE 89

Resistive Switching in TiO₂: Comparison of thermally oxidized and magnetron sputtered films — •Daniel Blaschke^{1, 2}, Steffen Cornelius¹, Peter Zahn¹, Sibylle Gemming^{1, 2}, Ilona Skorupa¹, Bernd Scheumann¹, Andrea Scholz¹, and Kay Potzger¹ — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany — ²Chair of Scale-bridging Materials Modeling, Physics Department, Chemnitz University of Technology, Germany

Resistive RAM devices based on TiO₂ are promising candidates for the next generation memory storage devices. We compared TiO₂ thin films from two different preparation methods with respect to crystallinity and resistive switching behavior. While thermal oxidation of 100nm Ti on Pt/Ti/SiO₂/Si substrates leads to polycrystalline rutile TiO₂ layers, dc-magnetron sputter deposition of films on Nb:STO substrates leads to epitaxial anatase TiO₂ structure. In case of the rutile films, unipolar switching occurred, which points to a filamentary mechanism based on the formation of Magnéli phases [1]. The epitaxial anatase films, however, showed bipolar switching, which we correlated with the modification of the metal/oxide interface due to the drift of oxygen vacancies in the applied electric field [2].

The project is funded by the Initiative and Networking Fund of the Helmholtz Association (VI MEMRIOX, VH-VI-422).

[1] Deok-Hwang Kwon et al., Nature Nanotechnology 5, 148 - 153 (2010)

[2] J. Joshua Yang et al., Nature Nanotechnology 3, 429 - 433 (2008)