DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)

DS 32.6: Vortrag

Mittwoch, 2. April 2014, 16:15–16:30, CHE 89

Resistive Switching in TiO2: Comparison of thermally oxidized and magnetron sputtered films — •Daniel Blaschke1, 2, Steffen Cornelius1, Peter Zahn1, Sibylle Gemming1, 2, Ilona Skorupa1, Bernd Scheumann1, Andrea Scholz1, and Kay Potzger11Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany — 2Chair of Scale-bridging Materials Modeling, Physics Department, Chemnitz University of Technology, Germany

Resistive RAM devices based on TiO2 are promising candidates for the next generation memory storage devices. We compared TiO2 thin films from two different preparation methods with respect to crystallinity and resistive switching behavior. While thermal oxidation of 100nm Ti on Pt/Ti/SiO2/Si substrates leads to polycrystalline rutile TiO2 layers, dc-magnetron sputter deposition of films on Nb:STO substrates leads to epitaxial anatase TiO2 structure. In case of the rutile films, unipolar switching occurred, which points to a filamentary mechanism based on the formation of Magnéli phases [1]. The epitaxial anatase films, however, showed bipolar switching, which we correlated with the modification of the metal/oxide interface due to the drift of oxygen vacancies in the applied electric field [2].

The project is funded by the Initiative and Networking Fund of the Helmholtz Association (VI MEMRIOX, VH-VI-422).

[1] Deok-Hwang Kwon et al., Nature Nanotechnology 5, 148 - 153 (2010)

[2] J. Joshua Yang et al., Nature Nanotechnology 3, 429 - 433 (2008)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden