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DS: Fachverband Dünne Schichten

DS 33: Focus session: Resistive Switching by Redox and Phase Change Phenomena IV (Kinetic in oxides and phase change)

DS 33.2: Talk

Wednesday, April 2, 2014, 17:00–17:15, CHE 89

Memristive tunnel junctions — •Mirko Hansen, Martin Ziegler, and Hermann Kohlstedt — Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Germany

We present results on a device concept which consists of a tunnel barrier and a thin titanium oxide layer in between two metal electrodes. In our device, oxygen vacancies are supposed to be confined between the tunnel barrier and the top electrode. This limits the distance of the oxygen vacancy drift under an applied electric field to the thickness of the titanium oxide. We discuss results on junctions with the layer sequence Nb/Al/Al₂O₃/TiO_2−x/TE and the influence of different top electrode (TE) materials. First electrical measurements indicate a homogenous change in resistance without the formation of a conductive filament. These samples were prepared on 4^′′ wafers using standard optical lithography, (reactive) DC sputtering and reactive ion/wet etching.