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Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 33: Focus session: Resistive Switching by Redox and Phase Change Phenomena IV (Kinetic in oxides and phase change)

DS 33.3: Vortrag

Mittwoch, 2. April 2014, 17:15–17:30, CHE 89

Doping and resistive switching effects induced by carrier injection in high temperature superconductors — •Irina Lazareva1, Yilmaz Simsek1, Yury Koval1, Paul Müller1, Sabine Wurmehl2, Bernd Büchner2, Tobias Stürzer3, and Dirk Johrendt31Universität Erlangen-Nürnberg, Erlangen, Deutschland — 2IFW, Dresden, Deutschland — 3LMU, München, Deutschland

Doping by current injection was investigated in various high temperature superconductors. Only by injection of large currents along the c-axis we were able to change carrier concentration in Bi2Sr2CaCu2O8+δ cuprate as well as in LaO1−xFxFeAs and Ca10(FeAs)10(Pt4As8) pnictides. The doping effect is persistent and reversible resembling the resistive-memory switching phenomena observed in various oxides. The mutual influence of chemical doping and change of the charge carrier concentration by current injection is analyzed. The general tendency of carrier doping by trapped electrons is discussed.

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