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DS: Fachverband Dünne Schichten
DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)
DS 34.1: Invited Talk
Wednesday, April 2, 2014, 18:30–19:00, CHE 89
Materials engineering for phase change memory — •Simone Raoux1 and Huai-Yu Cheng2 — 1IBM/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598, USA — 2IBM/Macronix PCRAM Joint Project, Macronix International Co., Ltd., Emerging Central Lab., 16 Li-Hsin Rd., Science Park, Hsinchu, Taiwan, ROC
Phase change memory is an emerging storage technology based on the unique combination of properties of phase change materials. Phase change materials exist an amorphous and a crystalline phase with distinctly different properties, and it is possible to switch the material repeatedly and rapidly between these two phases. The large difference in electrical resistance is used on phase change memory to store information. Phase change memory can have several potential applications such as storage class memory, embedded memory, replacement of DRAM (dynamic random access memory). We have explored various novel phase change materials and optimized their properties for specific applications. These materials include Ge-Sb-Te based alloys and Ga-Sb based alloys. A overview of the materials properties as function of composition is given with a focus on materials for high temperature applications, materials for high cyclability, and materials for ultra-fast switching.