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DS: Fachverband Dünne Schichten
DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)
DS 34.2: Talk
Wednesday, April 2, 2014, 19:00–19:15, CHE 89
Application of the Mössbauer effect in Ge-Sb-Te and Sn-Sb-Te phase change materials — •Ronnie Ernst Simon1,2, Ilya Sergueev3, and Raphaël Pierre Hermann1,2 — 1Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, Jara-FIT Forschungszentrum Jülich GmbH, D-52425 Jülich Germany — 2Faculté des Sciences, Université de Liège, B-4000 Liège, Belgium — 3Deutsches Elektronen-Synchrotron, D-22607 Hamburg, Germany
Phase change materials exhibit a significant change of the electrical resistivity upon crystallization which renders these materials promising candidates for resistive switches and non-volatile electronic memories. In order to understand the switching mechanism between the amorphous and crystalline phases a detailed knowledge of the structure on a microscopic scale is crucial. Mössbauer spectroscopy and nuclear forward scattering of synchrotron radiation which are both based on the application of the Mössbauer effect are suitable techniques for local structure investigations. We performed conventional 121Sb Mössbauer spectroscopy and 73Ge and 119Sn nuclear forward scattering measurements in Ge-Sb-Te and Sn-Sb-Te phase change materials in order to study hyperfine interactions. Measurements were performed as a function of temperature, stoichiometry and crystallinity and reveal valence changes upon crystallization. The DESY (Petra III, P01) and ESRF (ID18) are acknowledged for the provision of beamtime.