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DS: Fachverband Dünne Schichten

DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)

DS 34.5: Talk

Wednesday, April 2, 2014, 19:45–20:00, CHE 89

Thermal annealing studies on GeSbTe alloy-films grown on Si(111) by Molecular Beam Epitaxy — •Valeria Bragaglia, Rui Ning Wang, Jos Boschker, and Raffaella Calarco — Paul-Drude-Institut fur Festkorperelektronik, Berlin, Germany

Phase change materials are already a well established technology for data storage, in virtue of the strong optical and electrical contrast exhibited between the amorphous and the crystalline phase; additionally the switching between those two states can take place fast and reversibly. The study and comprehension of the crystallization process is then of fundamental importance. Effects of thermal crystallization on the structure of GST alloys have been widely studied. In general the films used in those investigations are produced by sputtering technique and grown on Si substrates with native SiO₂. The resulting crystalline phase is thus polycrystalline.

In this study we present the structural change upon annealing of amorphous and metastable-cubic GST films deposited on Si(111) by molecular beam epitaxy. High degree of ordering in the out-of-plane direction is achieved by annealing an amorphous GST film deposited on Si(111), as opposed to previous annealing experiments on GST deposited on non crystalline substrates. Additional annealing experiments were performed in order to find the best way to improve the quality of the GST films and find out a possible model of crystallization.