Dresden 2014 – scientific programme
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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.17: Poster
Thursday, April 3, 2014, 16:00–19:00, P1
Laser-induced phase transitions of PLD-deposited GeTe films — •Xinxing Sun1, Erik Thelander1, Hongbing Lu2, Jürgen W. Gerlach1, and Bernd Rauschenbach1 — 1Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318, Leipzig, Germany, — 2Hubei University, Wuhan 430062, China
Phase change memory materials based on chalcogenides can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, there materials can be employed for rewritable optical and electrical data storage. In this letter, phase transformations in Ge-Te thin films (grown using pulsed laser deposition system) are induced by irradiation with nanosecond laser pulse at 248 nm has been investigated. The influence of laser fluence between 20- 300 mJ/cm2 on the structure and properties of Ge-Te phase-change films were studied by X-ray diffraction and reflectivity measurements. The results show that switching is possible under irradiation with nanosecond pulses using single pulses for amorphization and multiples pulses for crystallization. For comparison, the large structural differences between the laser irradiated and thermally annealed films are also revealed, in between those of the crystalline and amorphous.