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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.3: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
The importance of local temperture for the SET kinetics in valence change memories — •Karsten Fleck1,2, Stephan Menzel2,3, Ulrich Böttger1,2, and Rainer Waser1,2,3 — 1Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen — 2JARA Fundamentals of Future Information Technology — 3Forschungszentrum Jülich GmbH
Resistive switching random access memories (ReRAM) based on the valence change mechanism (VCM) have gained much attention due to their scalability, endurance and switching speed. By the application of bipolar voltage signals of appropriate amplitude the resistance can be switched between a high resistive (HRS) and a low resistive state (LRS).
Commonly this resistance change is attributed to the modulation of an oxygen vacancy enriched nano-sized filament in the oxide layer. The switching kinetics of VCM cells are highly nonlinear which can be attributed to a positive temperature feedback due to local Joule heating in the filament.
The resistive switching of Ti/SrTiOx/Pt cells is investigated at varying background temperature by pulse measurements and voltage sweeps, both covering several orders of magnitude on the timescale. We found evidence for the importance of local temperature for the switching kinetics.