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Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 49: Atomic Layer Deposition

Freitag, 4. April 2014, 09:30–12:30, CHE 91

09:30 DS 49.1 Hauptvortrag: Synthesis, Characterization, and Application of Tunable Resistance Coatings — •Jeffrey W. Elam
10:00 DS 49.2 ALD on Multi-Stacked Polystyrene Opals for Thermal Barrier Coatings — •Robert Zierold, Martin Waleczek, Josep M. Montero Moreno, Roman Kubrin, Hooi Sing Lee, Alexander Petrov, Manfred Eich, Gerold A. Schneider, and Kornelius Nielsch
10:15 DS 49.3 New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides — •Massimo Tallarida, Karsten Henkel, Hassan Gargouri, Jörg Häberle, Bernd Gruska, Matthias Arens, and Dieter Schmeisser
10:30 DS 49.4 X-ray linear dichroism in atomic layer deposited Titanium dioxide layers — •Chittaranjan Das, Massimo Tallarida, and Dieter Schmeisser
10:45 DS 49.5 Control of thickness of SiO2 interfacial layer for photocatalytic water splitting on Si photocathodes — •Chittaranjan Das, Massimo Tallarida, and Dieter Schmeisser
  11:00 Coffee break (15 min)
11:15 DS 49.6 Atomic layer deposition of SrxTi1−xOy: Stoichiometry variation and layer characterization — •Solveig Rentrop, Barbara Abendroth, Hartmut Stöcker, Ralph Strohmeyer, Jura Rensberg, Juliane Walter, and Dirk C. Meyer
11:30 DS 49.7 Ta2O5 by thermal-activated ALD — •Marcel Junige, Ralf Tanner, Christian Wenger, Grzegorz Lupina, Matthias Albert, and Johann W. Bartha
11:45 DS 49.8 Simulation of the deposition and growth of nano-crystalline MgF2 films via the low-temperature atom beam deposition methodSridhar Neelamraju, •Johann Christian Schön, and Martin Jansen
12:00 DS 49.9 Structural changes in HfO2 thin films: thickness and doping dependence — •Simone Brizzi, Massimo Tallarida, Christoph Adelmann, Lars-Ake Ragnasson, Sven Van Elshocht, and Dieter Schmeisser
12:15 DS 49.10 Charging effect in HfO2 films deposited on SiO2/Si by atomic layer deposition — •Silma Alberton Correa, Simone Brizzi, Massimo Tallarida, and Dieter Schmeisser
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