Dresden 2014 – scientific program

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DS: Fachverband Dünne Schichten

DS 49: Atomic Layer Deposition

DS 49.3: Talk

Friday, April 4, 2014, 10:15–10:30, CHE 91

New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides — •Massimo Tallarida1, Karsten Henkel1, Hassan Gargouri2, Jörg Häberle1, Bernd Gruska2, Matthias Arens2, and Dieter Schmeisser11Brandenburg University of Technology, Konrad Wachsmann Allee, 17, 03046, Cottbus Germany — 2Sentech Instruments GmbH, Schwarzschildstrasse 2, 12489 Berlin, Germany

Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films.

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