Dresden 2014 – scientific program

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DS: Fachverband Dünne Schichten

DS 49: Atomic Layer Deposition

DS 49.9: Talk

Friday, April 4, 2014, 12:00–12:15, CHE 91

Structural changes in HfO2 thin films: thickness and doping dependence — •Simone Brizzi1, Massimo Tallarida1, Christoph Adelmann2, Lars-Ake Ragnasson2, Sven Van Elshocht2, and Dieter Schmeisser11Brandenburg University of Technology, Konrad-Wachsmann Allee 17, 03046 Cottbus, Germany — 2Imec, Kapeldreef 75, B-3001 Leuven, Belgium

In this work we show results regarding MOCVD and ALD HfO2 as well as Al-doped HfO2. We use Synchrotron Radiation Photoemission Spectroscopy (SRPES) to determine Hf/O atomic ratios and X-ray Absorption Spectroscopy (XAS) to investigate the electronic properties related to their crystallization. MOCVD films are synthesized at temperatures ranging from ambient to 400C and show structures from completely amorphous to monoclinic. ALD films are amorphous as deposited, and can crystallize after post-deposition anneal depending on the percentage of Al-doping. We discuss PES results in order to determine how close to stoichiometry the Hf/O atomic ratios of the films are, as well as the doping level. From XAS data, instead, we can point out how orbital hybridizations are related to structural and physical properties.

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