Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 6: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...)

DS 6.16: Vortrag

Montag, 31. März 2014, 19:15–19:30, CHE 89

Quantitative grazing incidence X-ray fluorescence analysis for reference-free elemental depth profiling of thin films — •Cornelia Streeck¹, Beatrix Pollakowski¹, Christian Herzog², Janin Lubeck¹, Martin Gerlach¹, Philipp Hönicke¹, Rainer Unterumsberger¹, Stephan Brunken³, Christian Kaufmann³, Burkhard Beckhoff¹, Birgit Kanngießer², and Roland Mainz³ — ¹Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin — ²Institut für Optik und Atomare Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin — ³Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 12109 Berlin

Synchrotron-radiation based X-ray fluorescence analysis under grazing incidence (GIXRF) conditions provides a non-destructive access to the compositional depth profile of thin films in the nano and micro meter range. Using reference-free GIXRF measurements and a fundamental parameter based quantification no well-characterized standards for calibration purposes are required. As an example, thin films of Cu(In,Ga)Se2 (CIGSe) have been were investigated, which are used as absorber layer of thin film solar cells. In the case of CIGSe, a graded band gap is created by a depth-dependent variation of the absorber matrix elements. To correlate the device functionality with the respective material properties, both the absolute composition and the in-depth gradient in CIGSe thin films require reliable determination. Due to the lack of appropriate reference materials, non-destructive GIXRF is used to address this analytical challenge.