Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 6: Thin Film Characterization: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS,...)
DS 6.4: Vortrag
Montag, 31. März 2014, 15:45–16:00, CHE 89
metal layer growth on Alq3: towards OLEDs — •Shun Yu1, Yuan Yao2, Gonzalo Santoro1, Peng Zhang1, Sarathlal Koyiloth Vayalil1, Matthisas Schwartzkopf1, Ezzeldin Metwalli2, Peter Müller-Buschbaum2, and Stephan V. Roth1 — 1Photon Science, DESY, Notkestraße 85, 22607, Hamburg — 2TU München, Physik-Department, LS Funktionelle Materialien, James-Franck-Str. 1, 85748 Garching
Organic light emitting diodes have entered the market as the next generation digital displays and solid-state lighting devices. Its typical multilayer device structure emphasizes the significance of understanding the interfacial structure and properties. Comparing to evaporate the metal contact, Here we used sputter deposition to prepare Al, Ag and Au electrical contact onto Tris(8-hydroxyquinolinato)aluminium (Alq3), the activating layer. The interaction between metals and Alq3 has been studied by different spectroscopic techniques and theoretical methods at atomic level. The growth of metallic thin film demands deep understanding concerning the dynamic process. In this work, we have exploited in situ grazing incidence small angle X-ray scattering technique to monitor the growth of metallic thin film on top of Alq3 layer during the sputtering process in real time. We elucidate interesting results that the highly reactive Al manifest completely different growth mode compared to the Ag and Au, showing three-stage growth mode, nano-pillar structure and great roughness correlation to the substrate. Whereas, Ag and Au grow in a continuous way involving clustering and coarsening.