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DS: Fachverband Dünne Schichten
DS 9: Layer Properties: Electrical, Optical, and Mechanical Properties
DS 9.10: Talk
Tuesday, April 1, 2014, 12:30–12:45, CHE 91
Investigating Few Layer Gallium Selenide (GaSe) with Advanced Atomic Force Microscopy and Optical Techniques — •Matthias A. Fenner1, Raul D. Rodriguez2, Alexander Villabona2,3, Santos A. Lopez-Rivera3, and Dietrich R.T. Zahn2 — 1Agilent Technologies, 60528 Frankfurt, Germany — 2Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 3Universidad de Los Andes, Applied Physics Lab, Merida 05101, Venezuela
Gallium selenide (GaSe) nanosheets have been reported to exhibit superior properties in field effect transistors and photo detectors as compared to other two-dimensional, layered materials [1-3]. We prepared few layer GaSe flakes by mechanical transfer to a graphite substrate. Individual flakes of several tens micrometer size are obtained and can readily be detected by optical microscopy. We used atomic force microscopy to investigate the nanoscale mechanical and electrical properties of the flakes. We will discuss the remarkable differences observed in the same area investigated by Raman spectroscopy and imaging, in particular, the correlation between the first order Raman modes of GaSe and the selective enhancement of the underlying graphite substrate.
[1] P. Hu, Z. Wen, L. Wang, P. Tan, K. Xiao, Acs Nano, 6 (2012) 5988. [2] S. Lei, L. Ge, Z. Liu, S. Najmaei, G. Shi, G. You, J. Lou, R. Vajtai, P.M. Ajayan, Nano Lett., 13 (2013) 2777. [3] D.J. Late, B. Liu, J. Luo, A. Yan, H.S.S.R. Matte, M. Grayson, C.N.R. Rao, V.P. Dravid, Adv. Mat., 24 (2012) 3549.