Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 9: Layer Properties: Electrical, Optical, and Mechanical Properties

DS 9.4: Talk

Tuesday, April 1, 2014, 10:45–11:00, CHE 91

Sputter yield amplification upon reactive serial co-sputtering of doped TiO2 — •Rüdiger M. Schmidt¹, Tomas Kubart², Andreas Pflug³, and Matthias Wuttig^1,4 — ¹I. Institute of Physics, RWTH Aachen University, Germany — ²Solid State Electronics, The Ångström Laboratory, Uppsala University, Sweden — ³Fraunhofer IST, Braunschweig, Germany — ⁴JARA - Fundamentals of Future Information Technologies

TiO₂ plays a prominent role in several applications such as anti-reflective coatings and self-cleaning surfaces, mainly because of its high refractive index. Most frequently this material is deposited by reactive magnetron sputtering. Unfortunately TiO₂ suffers from a comparatively low deposition rate. To increase the deposition rate, Sputter Yield Amplification (SYA) can be used through recoil of the sputtering species at implanted heavy dopants below the target surface. Here we present experimental results for different heavy dopants using a dedicated sputter deposition tool. By use of serial co-sputtering in situ variations of the target stoichiometry can be facilitated, which enable systematic studies of SYA. To quantify the amplification, film thicknesses have been deduced by x-ray reflectometry measurements and subsequent simulations. Ellipsometry as well as reflectance and transmission data have been taken to model the dielectric function of the resulting films giving access to the refractive index.