Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 100: Metamorphic structures: Bringing together incompatible materials II (Focus session with DF)

HL 100.5: Vortrag

Donnerstag, 3. April 2014, 16:15–16:30, POT 251

Direct correlation of optical and structural properties of InGaN/GaN core-shell microrods by STEM-Cathodoluminescence — •Benjamin Max1, Marcus Müller1, Gordon Schmidt1, Anja Dempewolf1, Thomas Hempel1, Peter Veit1, Frank Bertram1, Jürgen Christen1, Martin Mandl2, Tilman Schimpke2, and Martin Strassburg21Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany — 2OSRAM Opto Semiconductors GmbH, Regensburg, Germany

We present a direct nano-scale correlation of the optical properties with the crystalline real structure of InGaN/GaN core-shell microrods using highly spatially resolved cathodoluminescence spectroscopy (CL). The characterized three microrod samples were grown by MOVPE on c-plane GaN/sapphire template via selective area growth using a SiO2 mask: a GaN microrod reference structure without shell, a sample with InGaN single quantum well (SQW), and finally a complete core-shell LED structure were investigated. In all samples the GaN NBE emission originates exclusively from the compressively strained GaN template with an emission line at 356 nm. Spatially resolved CL mappings of the undoped sample and the LED structure exhibit luminescence from the InGaN SQW on the non-polar facet at about 400 nm. In contrast, on the semi-polar facet at the tip of the microrod the InGaN SQW luminescence is shifted to longer wavelengths. Additionally, the final core-shell LED structure shows DAP recombination at 380 nm, superimposing the InGaN SQW emission at the non-polar facets.

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