Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 102: Sustainable photovoltaics with earth-abundant materials II (organized by DS)

HL 102.8: Vortrag

Donnerstag, 3. April 2014, 16:45–17:00, CHE 91

Growth and characterization of polycrystalline Cu2ZnSnSe4 layers with a preferential grain orientation — •Christoph Krämmer1, Johannes Sachs1, Mario Lang1, Chao Gao1, Sabine Schuster1, Michael Powalla2, Heinz Kalt1, and Michael Hetterich11Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2Light Technology Institute, KIT, and Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart, Germany

The absence of the technologically relevant metals indium and gallium makes the kesterite Cu2ZnSnSe4 (CZTSe) material system a promising alternative to the established Cu(In,Ga)Se2. Hiqh-quality CZTSe layers on GaAs would be highly desirable for the study of basic material properties such as the band structure. We use selenization of a Sn/Cu/ZnSe(001) structure on GaAs(001) substrate in order to fabricate polycrystalline CZTSe layers with preferential grain orientation. In this contribution we present a detailed investigation of those layers by means of X-ray diffraction and Raman spectroscopy. These measurements prove that a highly preferential grain orientation in all three dimensions is indeed obtained in the formed CZTSe film.

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