Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 106: Poster: Spintronics (with MA/O)

HL 106.1: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Preparation of single bismuth atoms on the silicon (111)-(7x7) surface — •Alexander Kölker1,2, Matthias Eltschka1, Carola Straßer1, Markus Etzkorn1, Christian Ast1, and Klaus Kern1,31Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany — 2Westfälische Wilhelms-Universität Münster, Fachbereich Physik, 48149 Münster, Germany — 3Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Exploiting the nuclear spin for qubits is a possible route towards the realization of quantum computing. Bi in Si is a promising donor based quantum system due to the combination of its large nuclear spin (I = 9/2) and large hyperfine splitting that could be resolved by inelastic electron tunneling spectroscopy (IETS) [1].

In preparation of such a measurement we have investigated Bi in the sub monolayer regime on the Si (111)-(7x7) surface by scanning tunneling microscopy (STM). We observe the formation of isolated Bi impurities on the surface. Increasing the temperature of the Si sample during the evaporation of Bi we have observed a smaller height of the Bi atoms on the Si (111)-(7x7) surface, which indicates a stronger bound state of Bi atoms to the surface. First steps have been carried out to study the electronic properties of both systems at room temperature.

The ultimate goal is to observe single nuclear spin flips with an STM. As this energy scale is extremely small, we will investigate this using an STM operating at 15 mK for high energy resolution.

[1] F.Delgado Phys. Rev. Lett. 107, 076804 (2011)

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