Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 108: Poster: Ultra-fast phenomena / Optical properties / Semiconductor laser / Devices and device concepts

HL 108.18: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Microintegrated Laser Systems at 767 nm and 780 nm — •Kai Lampmann1,2, Max Schiemangk1,2, Erdenetsetseg Luvsandamdin1, Andreas Wicht1, Achim Peters1,2, Götz Erbert1, Günther Tränkle1, and The LASUS Team1,2,3,41Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin — 2Institut für Physik, HU Berlin — 3Institut für Quantenoptik, LU Hannover — 4Institut für Laserphysik, U Hamburg

We present hybrid integrated laser modules in the near infrared at wavelengths of 767 nm and 780 nm suitable for atom optic applications. For narrow linewidth emission with high optical output power in the Watt range, a master oscillator power amplifier (MOPA) concept is used. A distributed feedback semiconducter laser diode (DFB) serves as the master oscillator, which provides excellent spectral properties. The light is injected into a tapered amplifier (TA), which increases the output power while preserving the linewidth of the amplified light at the same time. The laser chips, microlenses and an optical isolator are integrated on an AlN substrate with a footprint of 10 × 50   mm2 using special positioning techniques with an accuracy better than 1   µ m.

The LASUS project is supported by the German Space Agency DLR with funds provided by the Federal Ministry of Economics and Technology (BMWi) under grant numbers 50WM 1237 - 1240.

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