Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 114: Oxides: Bulk, films and interfaces

HL 114.11: Vortrag

Freitag, 4. April 2014, 12:15–12:30, POT 251

Highly rectifying contacts on amorphous zinc-tin-oxide thin films consisting of metals and p-type zinc-cobalt-oxide — •Peter Schlupp, Friedrich-Leonhard Schein, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Leipzig, Deutschland

In order to provide cost-efficient and homogeneous oxide thin films for electronic devices it is desirable to use amorphous materials which can be deposited at room temperature (RT). Zinc-tin-oxide (ZTO) is a promising n-type semiconducting material in which only abundent materials are contained. To produce MESFETs or JFETs highly rectifying Schottky contacts or pn-heterodiodes are needed. The latter could be realized with p-type semiconductors like zinc-cobalt-oxide (ZCO).

We present electrical properties of highly rectifying contacts on amorphous ZTO layers. Our first metal-semiconductor structures showed only weakly rectifying behavior due to trap-assisted tunnel currents. In order to improve rectification, we introduced a thin insulating ZTO layer between the metal and the thin film. Optimized Schottky contacts on this structure exhibit current on/off-ratios up to 107 at ±2 V. Using p-type ZCO we fabricated all-amorphous oxide heterodiodes. Again, we introduced an insulating ZTO layer on the n-side of the heterointerface and obtained pin-diodes having current on/off ratios up to 5× 106 at ±1.6 V. Thus they widely outperform the previously best fully amorphous TSO pn-junctions. Temperature dependent current-voltage characteristics and the current transport mechanism across the heterointerface will be discussed.

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