Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 114: Oxides: Bulk, films and interfaces

HL 114.5: Vortrag

Freitag, 4. April 2014, 10:30–10:45, POT 251

A comprehensive study on ion-implantation induced defects in ZnO thin films — •Florian Schmidt1, Stefan Müller1, Holger von Wenckstern1, Robert Röder2, Sebastian Geburt2, Carsten Ronning2, and Marius Grundmann11Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — 2Friedrich-Schiller-Universität Jena, Institute for Solid State Physics, D-07743 Jena

Deep defects levels in semiconductors have significant impact on material properties and device performance. Therefore a profound understanding of such defects is helpful for device optimization. Devices based on the semiconductor ZnO has been reported in the last years and even simple transparent circuitry have been demonstrated [1].

Here we present characterization of deep-level defects introduced by implantation of Ar+, Ne+, Zn and O by means of deep-level transient spectroscopy (DLTS) and optical DLTS (ODLTS). Independent of the implanted ion defect levels with thermal activation energies of Ea ≈ 1000   meV and ≈ 1200   meV were introduced. A defect level with the thermal activation energy of 388   meV was only detectable after oxygen ion implantation. We will present for each ion implanted the density of the defects introduced.

[1] H. Frenzel et al., phys. stat. sol. RRL 7 (9), 605 (2013).

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