Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 13: Nitrides: Optical characterization

HL 13.6: Vortrag

Montag, 31. März 2014, 12:30–12:45, POT 251

Photoluminescence of Zn and Mn doped thick GaN layers — •Friederike Zimmermann¹, Jan Beyer¹, Frank Habel², Gunnar Leibiger², Berndt Weinert², Martin Krupinski³, Patrick Hofmann³, and Johannes Heitmann¹ — ¹Institute of Applied Physics, TU Bergakademie Freiberg, Leipziger Str. 23, D-09599 Freiberg, Germany — ²Freiberger Compound Materials GmbH, Am Junger-Löwe-Schacht 5, D-09599 Freiberg, Germany — ³Namlab gGmbH, Nöthnitzer Straße 64, 01187 Dresden, Germany

Due to its superior electronic properties, GaN-based devices are suitable for high power, high frequency and high temperature applications. The direct and wide bandgap of GaN makes it an ideal material for bright UV and blue light emitting diodes and lasers. Electronic and optical properties can be tuned by doping with transition metal elements. We report on photoluminescence spectroscopy data of Zn and Mn doped samples grown by HVPE. Zn doped samples exhibit clear exitonic features including the exciton bound to the Zn acceptor. For samples of different Zn content four broad bands in the red, yellow, green and blue spectral region are found to vary in their relative intensities and temperature quenching. Mn doped samples show intense peaks at 1.25 and 1.41 eV which are assigned to intra-d-shell transitions of the incorporated Mn-ions. Sharp features in the exitonic range at room temperature can be ascribed to Raman scattering of the laser. As transition metals are generally expected to suppress the PL Raman contribution cannot be ruled out in Zn doped samples neither.